N-channel Power MOSFET featuring 600V drain-source voltage and 22A continuous drain current. This single-element transistor operates in enhancement mode with a maximum drain-source resistance of 190 mOhm at 10V. Housed in a TO-247AC package, it offers through-hole mounting with 3 pins and a tab. Key specifications include a typical gate charge of 75nC and input capacitance of 2810pF, with a maximum power dissipation of 250W. Operating temperature range is -55°C to 150°C.
PackageTO-247AC
MountingThrough Hole
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Technical Specifications
Vishay SiHG22N60S technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247AC |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.87(Max) |
| Package Width (mm) | 5.31(Max) |
| Package Height (mm) | 20.82(Max) |
| Seated Plane Height (mm) | 25.11(Max) |
| Pin Pitch (mm) | 5.46 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-247AC |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 22A |
| Maximum Drain Source Resistance | 190@10VmOhm |
| Typical Gate Charge @ Vgs | 75@10VnC |
| Typical Gate Charge @ 10V | 75nC |
| Typical Input Capacitance @ Vds | 2810@25VpF |
| Maximum Power Dissipation | 250000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiHG22N60S Datasheet
Download the complete datasheet for Vishay SiHG22N60S to view detailed technical specifications.
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