N-Channel Power MOSFET featuring 600V drain-source voltage and 29A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 125mΩ drain-source on-resistance and a maximum power dissipation of 250W. Designed for through-hole mounting in a TO-247AC package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 19ns turn-on delay and 36ns fall time.
PackageTO-247AC
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SIHG30N60E-GE3 technical specifications.
General
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 125mR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.82mm |
| Input Capacitance | 2.6nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 125mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 63ns |
| Turn-On Delay Time | 19ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIHG30N60E-GE3 Datasheet
Download the complete datasheet for Vishay SIHG30N60E-GE3 to view detailed technical specifications.
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