N-channel power MOSFET featuring 500V drain-to-source voltage (Vdss) and 150mΩ drain-to-source resistance (Rds On). This component offers a continuous drain current (ID) of 30A and a maximum power dissipation of 390W. Designed for through-hole mounting in a TO-247-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 27ns turn-on delay, 58ns turn-off delay, and 55ns fall time. The device is RoHS compliant.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SIHG32N50D-GE3 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.55nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 390W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 27ns |
| Weight | 1.340411oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIHG32N50D-GE3 Datasheet
Download the complete datasheet for Vishay SIHG32N50D-GE3 to view detailed technical specifications.
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