N-channel MOSFET with 500V drain-source voltage and 20A continuous drain current. Features 250mOhm drain-source resistance at 10V gate-source voltage. Operates with a 2V threshold voltage and offers fast switching with turn-on delay of 24ns and fall time of 56ns. Housed in a TO-247AC package for through-hole mounting, this RoHS compliant component supports a maximum power dissipation of 278W and operates from -55°C to 150°C.
PackageTO-247AC
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SiHG460B-GE3 technical specifications.
General
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 56ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.82mm |
| Input Capacitance | 3.094nF |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 278W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 250mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 117ns |
| Turn-On Delay Time | 24ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SiHG460B-GE3 Datasheet
Download the complete datasheet for Vishay SiHG460B-GE3 to view detailed technical specifications.
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