
N-channel power MOSFET with 600V drain-source voltage and 47A continuous drain current. Features 64mΩ drain-source on-resistance and 357W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. This through-hole component is housed in a TO-247AC package and is RoHS compliant.
Vishay SIHG47N60E-E3 technical specifications.
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 64mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.62nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 357W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 357W |
| Radiation Hardening | No |
| Rds On Max | 64mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 94ns |
| Turn-On Delay Time | 24ns |
| Weight | 1.340411oz |
| RoHS | Compliant |
Download the complete datasheet for Vishay SIHG47N60E-E3 to view detailed technical specifications.
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