N-channel power MOSFET featuring 600V drain-source voltage and 47A continuous drain current. Offers a low 70mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247-3 package, this silicon metal-oxide semiconductor field-effect transistor operates within a -55°C to 150°C temperature range and boasts a maximum power dissipation of 417W. Key switching characteristics include a 30ns turn-on delay and a 9ns fall time.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SIHG47N60S-E3 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Resistance | 57mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 70mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.63nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 417W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | E |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 115ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIHG47N60S-E3 Datasheet
Download the complete datasheet for Vishay SIHG47N60S-E3 to view detailed technical specifications.
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