N-Channel Silicon Power MOSFET, 650V Drain-Source Voltage, 47A Continuous Drain Current, and 72mΩ Drain-Source Resistance. Features a TO-247-3 through-hole package, 417W maximum power dissipation, and operates from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 47ns and fall time of 103ns. This component is RoHS compliant and lead-free.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power417W
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Technical Specifications
Vishay SIHG47N65E-GE3 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Resistance | 72mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 103ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.682nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 417W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 417W |
| Radiation Hardening | No |
| Rds On Max | 72mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 156ns |
| Turn-On Delay Time | 47ns |
| Weight | 1.340411oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIHG47N65E-GE3 Datasheet
Download the complete datasheet for Vishay SIHG47N65E-GE3 to view detailed technical specifications.
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