N-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 8A continuous drain current. This single-element transistor is housed in a TO-220 Full-Pak through-hole package with a 2.54mm pin pitch. Key specifications include a maximum drain-source on-resistance of 200mΩ at 5V, typical gate charge of 8.4nC at 5V, and typical input capacitance of 400pF at 25V. Maximum power dissipation is 27000mW, with an operating temperature range of -55°C to 175°C.
PackageTO-220 Full-Pak
MountingThrough Hole
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Technical Specifications
Vishay SiHLIZ14G-E3 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 Full-Pak |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.63(Max) |
| Package Width (mm) | 4.83(Max) |
| Package Height (mm) | 16.12(Max) |
| Seated Plane Height (mm) | 19.62(Max) |
| Pin Pitch (mm) | 2.54 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 8A |
| Maximum Drain Source Resistance | 200@5VmOhm |
| Typical Gate Charge @ Vgs | 8.4(Max)@5VnC |
| Typical Input Capacitance @ Vds | 400@25VpF |
| Maximum Power Dissipation | 27000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | 18612 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Vishay SiHLIZ14G-E3 Datasheet
Download the complete datasheet for Vishay SiHLIZ14G-E3 to view detailed technical specifications.
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