N-channel Power MOSFET, single configuration, enhancement mode, designed for surface mounting in a TO-252 DPAK package. Features a maximum drain-source voltage of 100V, continuous drain current of 4.3A, and a low gate threshold voltage of 2V. Offers a maximum drain-source resistance of 540mOhm at 5V, with typical gate charge of 6.1nC and input capacitance of 250pF. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2500mW.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Vishay SiHLR110TL technical specifications.
General
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 6.22(Max) |
| Package Height (mm) | 2.38(Max) |
| Seated Plane Height (mm) | 2.52(Max) |
| Pin Pitch (mm) | 2.28 |
| Package Weight (g) | 0.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 4.3A |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 540@5VmOhm |
| Typical Gate Charge @ Vgs | 6.1(Max)@5VnC |
| Typical Input Capacitance @ Vds | 250@25VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 80pF |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiHLR110TL Datasheet
Download the complete datasheet for Vishay SiHLR110TL to view detailed technical specifications.
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