N-channel power MOSFET featuring 500V drain-source voltage and 14A continuous drain current. Offers 400mΩ drain-source resistance and 208W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, with fast switching characteristics including 16ns turn-on delay and 26ns fall time. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power208W
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Technical Specifications
Vishay SIHP14N50D-E3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.144nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Series | E |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 16ns |
| Weight | 0.211644oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIHP14N50D-E3 Datasheet
Download the complete datasheet for Vishay SIHP14N50D-E3 to view detailed technical specifications.
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