N-Channel Power MOSFET featuring 600V drain-source voltage and 15A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 280mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, it operates within a -55°C to 150°C temperature range and supports 180W power dissipation. Key switching characteristics include a 17ns turn-on delay and 33ns fall time. RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power180W
Quick Jump:
Technical Specifications
Vishay SIHP15N60E-E3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 280mR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.35nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 180W |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.211644oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIHP15N60E-E3 Datasheet
Download the complete datasheet for Vishay SIHP15N60E-E3 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
