N-channel power MOSFET with 600V drain-source voltage and 15A continuous drain current. Features low 280mΩ drain-source on-resistance and 180W maximum power dissipation. Operates from -55°C to 150°C, packaged in a TO-220-3 through-hole mount. Includes fast switching characteristics with 17ns turn-on delay and 33ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SIHP15N60E-GE3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 280mR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 1.35nF |
| Lead Free | Lead Free |
| Length | 10.51mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| Reach SVHC Compliant | Unknown |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.211644oz |
| Width | 4.65mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay SIHP15N60E-GE3 Datasheet
Download the complete datasheet for Vishay SIHP15N60E-GE3 to view detailed technical specifications.
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