N-channel MOSFET with 600V drain-source voltage and 33A continuous drain current. Features 99mΩ drain-source resistance at 10V Vgs, 2V threshold voltage, and 3.508nF input capacitance. Operates from -55°C to 150°C with 278W max power dissipation. Through-hole mounting in a TO-220-3 package. RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SIHP33N60E-GE3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Resistance | 99mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 4V |
| Input Capacitance | 3.508nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 278W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 99mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | E Series |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 56ns |
| Weight | 0.211644oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIHP33N60E-GE3 Datasheet
Download the complete datasheet for Vishay SIHP33N60E-GE3 to view detailed technical specifications.
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