N-Channel Power MOSFET featuring 500V Drain-to-Source Voltage and 8.7A Continuous Drain Current. Offers 850mΩ maximum Drain-to-Source Resistance at 10V gate drive. Designed for through-hole mounting in a TO-220-3 package, this component boasts a maximum power dissipation of 156W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 13ns turn-on delay, 17ns turn-off delay, and 11ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SiHP8N50D-GE3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8.7A |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 527pF |
| Length | 10.51mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.211644oz |
| Width | 4.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SiHP8N50D-GE3 Datasheet
Download the complete datasheet for Vishay SiHP8N50D-GE3 to view detailed technical specifications.
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