N-channel MOSFET with 500V drain-source voltage and 36A continuous drain current. Features low 130mΩ drain-to-source resistance and 446W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-247-3 through-hole mount with a 3.233nF input capacitance and fast switching times including 33ns turn-on delay.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SIHS36N50D-E3 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 36A |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 68ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.8mm |
| Input Capacitance | 3.233nF |
| Length | 16.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 446W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 130mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 79ns |
| Turn-On Delay Time | 33ns |
| Weight | 1.340411oz |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIHS36N50D-E3 Datasheet
Download the complete datasheet for Vishay SIHS36N50D-E3 to view detailed technical specifications.
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