N-channel power MOSFET with 500V Drain to Source Voltage (Vdss) and 5.3A Continuous Drain Current (ID). Features 1.5 Ohm Drain to Source Resistance (Rds On Max) and 104W Max Power Dissipation. Packaged in TO-251-3 for through-hole mounting, this general-purpose power FET offers fast switching with 11ns fall time and 12ns turn-on delay. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power104W
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Technical Specifications
Vishay SIHU5N50D-E3 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 325pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 104W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.01164oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIHU5N50D-E3 Datasheet
Download the complete datasheet for Vishay SIHU5N50D-E3 to view detailed technical specifications.
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