Vishay
SIHW30N60E-GE3
Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD,
PackageTO-247AD
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SIHW30N60E-GE3 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 4V |
| Input Capacitance | 2.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 125mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 95ns |
| Turn-On Delay Time | 40ns |
| Weight | 1.340411oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIHW30N60E-GE3 Datasheet
Download the complete datasheet for Vishay SIHW30N60E-GE3 to view detailed technical specifications.
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