N-channel MOSFET with 30V drain-source voltage and 60A continuous drain current. Features low 1.8mR drain-source on-resistance and 83W maximum power dissipation. Operates from -55°C to 150°C, with fast switching times including a 16ns fall time. Surface mount PPAK SO-8 package, 4.9mm length, 5.89mm width, and 1.04mm height. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR158DP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
40A
Drain to Source Resistance
1.8mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
1.8MR
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
4.98nF
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1.8mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
47ns
Turn-On Delay Time
28ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SIR158DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR158DP-T1-GE3 to view detailed technical specifications.
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