N-channel MOSFET, 30V Vdss, 50A continuous drain current, and 2.5mR Rds(on) max. Features a 1.2V threshold voltage, 3.95nF input capacitance, and 69W max power dissipation. Operates from -55°C to 150°C in a surface-mount SOIC package. Includes fast switching times with 35ns turn-on and 52ns turn-off delays.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR164DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
50A
Drain to Source Resistance
2.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
3.2MR
Fall Time
39ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
3.95nF
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
69W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
2.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.2V
Turn-Off Delay Time
52ns
Turn-On Delay Time
35ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SIR164DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR164DP-T1-GE3 to view detailed technical specifications.
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