N-channel Power MOSFET featuring a 30V drain-source voltage and 29.5A continuous drain current. This single-element transistor is housed in an 8-pin PowerPAK SO EP surface-mount package with dimensions of 4.9mm x 5.89mm x 1.07mm (Max). It offers a low drain-source on-resistance of 32mΩ at 10V and a maximum power dissipation of 5000mW, operating across a temperature range of -55°C to 150°C. The configuration is Single Quad Drain Triple Source with typical gate charge values of 25nC at 4.5V and 51nC at 10V.
PackagePowerPAK SO EP
MountingSurface Mount
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Technical Specifications
Vishay SiR166DP technical specifications.
General
| Package Family Name | SOP |
| Package/Case | PowerPAK SO EP |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 5.89 |
| Package Height (mm) | 1.07(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 29.5A |
| Maximum Drain Source Resistance | 32@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|51@10VnC |
| Typical Gate Charge @ 10V | 51nC |
| Typical Input Capacitance @ Vds | 3340@15VpF |
| Maximum Power Dissipation | 5000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiR166DP Datasheet
Download the complete datasheet for Vishay SiR166DP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.