N-channel Power MOSFET featuring a 30V drain-source voltage and 29.5A continuous drain current. This single-element transistor is housed in an 8-pin PowerPAK SO EP surface-mount package with dimensions of 4.9mm x 5.89mm x 1.07mm (Max). It offers a low drain-source on-resistance of 32mΩ at 10V and a maximum power dissipation of 5000mW, operating across a temperature range of -55°C to 150°C. The configuration is Single Quad Drain Triple Source with typical gate charge values of 25nC at 4.5V and 51nC at 10V.
PackagePowerPAK SO EP
MountingSurface Mount
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Technical Specifications
Vishay SiR166DP technical specifications.
General
Package Family Name
SOP
Package/Case
PowerPAK SO EP
Pin Count
8
PCB
8
Package Length (mm)
4.9
Package Width (mm)
5.89
Package Height (mm)
1.07(Max)
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
29.5A
Maximum Drain Source Resistance
32@10VmOhm
Typical Gate Charge @ Vgs
[email protected]|51@10VnC
Typical Gate Charge @ 10V
51nC
Typical Input Capacitance @ Vds
3340@15VpF
Maximum Power Dissipation
5000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
18612
EU RoHS
No
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay SiR166DP Datasheet
Download the complete datasheet for Vishay SiR166DP to view detailed technical specifications.
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