N-CHANNEL MOSFET with 30V Drain-Source Voltage and 40A Continuous Drain Current. Features low 4.4mOhm Drain-Source Resistance at 10V Vgs, 2.4V Threshold Voltage, and 2.4V Nominal Vgs. Offers 34.7W Max Power Dissipation and operates across a -55°C to 150°C temperature range. Surface mount component with 15ns Fall Time, 33ns Turn-Off Delay, and 23ns Turn-On Delay. Packaged in Tape and Reel.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR168DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 4.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.04nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34.7W |
| Mount | Surface Mount |
| Nominal Vgs | 2.4V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4.4mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.4V |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 23ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR168DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR168DP-T1-GE3 to view detailed technical specifications.
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