N-CHANNEL MOSFET with 30V Drain-Source Voltage and 40A Continuous Drain Current. Features low 4.4mOhm Drain-Source Resistance at 10V Vgs, 2.4V Threshold Voltage, and 2.4V Nominal Vgs. Offers 34.7W Max Power Dissipation and operates across a -55°C to 150°C temperature range. Surface mount component with 15ns Fall Time, 33ns Turn-Off Delay, and 23ns Turn-On Delay. Packaged in Tape and Reel.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR168DP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
40A
Drain to Source Resistance
4.4mR
Drain to Source Voltage (Vdss)
30V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.04nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
34.7W
Mount
Surface Mount
Nominal Vgs
2.4V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
4.4mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.4V
Turn-Off Delay Time
33ns
Turn-On Delay Time
23ns
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SIR168DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR168DP-T1-GE3 to view detailed technical specifications.
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