N-Channel MOSFET, 30V Vdss, 20A Continuous Drain Current. Features low 8.9mΩ Rds On at 10V Vgs, 29.8W Max Power Dissipation, and 150°C Max Operating Temperature. Surface mount package with 13ns fall time and 19ns turn-on/off delay times. RoHS compliant, lead-free construction.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR172DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Resistance | 8.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 12.4MR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 997pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 29.8W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 8.9mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 19ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR172DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR172DP-T1-GE3 to view detailed technical specifications.
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