N-Channel MOSFET, 30V Vdss, 20A Continuous Drain Current. Features low 8.9mΩ Rds On at 10V Vgs, 29.8W Max Power Dissipation, and 150°C Max Operating Temperature. Surface mount package with 13ns fall time and 19ns turn-on/off delay times. RoHS compliant, lead-free construction.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR172DP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
20A
Drain to Source Resistance
8.9mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
12.4MR
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
997pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
29.8W
Mount
Surface Mount
Nominal Vgs
2.5V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
8.9mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.5V
Turn-Off Delay Time
19ns
Turn-On Delay Time
19ns
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SIR172DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR172DP-T1-GE3 to view detailed technical specifications.
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