The SiR186LDP is an N-channel 60 V (D-S) MOSFET utilizing TrenchFET Gen IV power technology. It features a very low drain-source resistance and gate charge figure-of-merit (FOM), specifically tuned for the lowest RDS-Qoss FOM. The device is 100% Rg and UIS tested, making it suitable for high-efficiency applications such as synchronous rectification, primary-side switches, DC/DC converters, and motor drive switches.
Temp Range-55 to 150°C
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Technical Specifications
Vishay SIR186LDP-T1-RE3 technical specifications.
General
| Drain-Source Voltage (VDS) | 60V |
| Continuous Drain Current (ID) | 80.3A |
| Drain-Source On-State Resistance (RDS(on)) @ VGS=10V | 4.4mΩ |
| Drain-Source On-State Resistance (RDS(on)) @ VGS=4.5V | 6.3mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | 1.5 to 2.5V |
| Total Gate Charge (Qg) Typ. | 15.2nC |
| Power Dissipation (Pd) @ Tc=25°C | 57W |
| Operating Temperature Range | -55 to 150°C |
| Configuration | Single |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
| Lead-free | Yes |
Datasheet
Vishay SIR186LDP-T1-RE3 Datasheet
Download the complete datasheet for Vishay SIR186LDP-T1-RE3 to view detailed technical specifications.
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