Vishay
SIR402DP-T1-E3
VISHAY SIR402DP-T1-E3 MOSFET Transistor, N Channel, 35 A, 30 V, 6 mohm, 10 V, 1.15 V
Resistance0.006R
Power4.2W
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Technical Specifications
Vishay SIR402DP-T1-E3 technical specifications.
General
Continuous Drain Current (ID)
35A
Drain to Source Voltage (Vdss)
30V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
4.2W
Nominal Vgs
1.15V
Packaging
Cut Tape
Power Dissipation
4.2W
Reach SVHC Compliant
Unknown
Resistance
0.006R
RoHS Compliant
Yes
Threshold Voltage
1.15V
Compliance
RoHS
Compliant
Datasheet
Vishay SIR402DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SIR402DP-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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