N-channel MOSFET with 30V drain-source voltage and 35A continuous drain current. Features low 6mΩ drain-source on-resistance at 10V gate-source voltage, enabling efficient power switching. Maximum power dissipation of 36W and a wide operating temperature range of -55°C to 150°C. Surface mountable in a SOIC package, this component offers fast switching speeds with turn-on and turn-off delay times of 25ns.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR402DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Resistance | 6.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 1.7nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR402DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR402DP-T1-GE3 to view detailed technical specifications.
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