The SIR424DP-T1-GE3 is a surface mount TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 41.7W and a maximum Rds On of 5.5mΩ. The device is RoHS compliant and lead free. It features an input capacitance of 1.25nF and a continuous drain current of 30A.
MountingSurface Mount
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Technical Specifications
Vishay SIR424DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 1.25nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41.7W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 5.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR424DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR424DP-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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