N-channel MOSFET transistor for surface mount applications, featuring a 30V drain-source voltage and 20A continuous drain current. Offers low on-resistance with a maximum of 9.5mΩ and a maximum power dissipation of 29.8W. Designed with fast switching characteristics, including a 9ns fall time, 14ns turn-on delay, and 19ns turn-off delay. Operates across a wide temperature range from -55°C to 150°C, packaged in a compact 8-pin PowerPAK SO format on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR474DP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
20A
Drain to Source Resistance
10mR
Drain to Source Voltage (Vdss)
30V
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
985pF
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
29.8W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
9.5mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
19ns
Turn-On Delay Time
14ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SIR474DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR474DP-T1-GE3 to view detailed technical specifications.
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