N-channel MOSFET transistor for surface mount applications, featuring a 30V drain-source voltage and 20A continuous drain current. Offers low on-resistance with a maximum of 9.5mΩ and a maximum power dissipation of 29.8W. Designed with fast switching characteristics, including a 9ns fall time, 14ns turn-on delay, and 19ns turn-off delay. Operates across a wide temperature range from -55°C to 150°C, packaged in a compact 8-pin PowerPAK SO format on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR474DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 985pF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 29.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 9.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR474DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR474DP-T1-GE3 to view detailed technical specifications.
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