N-channel MOSFET with 12V Vdss and 40A continuous drain current. Features low 3.8mR Rds On, 1V threshold voltage, and 4.2W power dissipation. Surface mountable in an SOIC package, this component offers fast switching with 27ns turn-on and 53ns turn-off delay times. Operating temperature range from -50°C to 150°C, RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power4.2W
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Technical Specifications
Vishay SIR492DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Resistance | 3.8mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 4.7MR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.04mm |
| Input Capacitance | 3.72nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 4.2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 4.2W |
| Radiation Hardening | No |
| Rds On Max | 3.8mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 27ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR492DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR492DP-T1-GE3 to view detailed technical specifications.
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