N-channel MOSFET transistor for surface mount applications. Features a 20V drain-source voltage (Vdss) and a continuous drain current (ID) of 35A. Offers a low drain-source on-resistance (Rds On) of 4.5mR at a 10V gate-source voltage. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 5W. Packaged in an 8-pin SOIC PowerPAK with tape and reel packaging.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR496DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Resistance | 4.6mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 1.57nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 21ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR496DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR496DP-T1-GE3 to view detailed technical specifications.
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