N-channel MOSFET with 40V drain-source voltage and 60A continuous drain current. Features low 2mΩ drain-to-source resistance at 10V gate-source voltage. Operates from -55°C to 150°C with a maximum power dissipation of 104W. This surface-mount component offers fast switching characteristics with a 38ns turn-on delay and 12ns fall time.
MountingSurface Mount
PolarityN-CHANNEL
Power6.25W
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Technical Specifications
Vishay SIR640ADP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
60A
Drain to Source Resistance
2mR
Drain to Source Voltage (Vdss)
40V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
4.24nF
Lead Free
Lead Free
Length
6.15mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
104W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
6.25W
Radiation Hardening
No
Rds On Max
2mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
42ns
Turn-On Delay Time
38ns
Weight
0.01787oz
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Vishay SIR640ADP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR640ADP-T1-GE3 to view detailed technical specifications.
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