N-channel MOSFET with 40V drain-source voltage and 60A continuous drain current. Features low 2mΩ drain-to-source resistance at 10V gate-source voltage. Operates from -55°C to 150°C with a maximum power dissipation of 104W. This surface-mount component offers fast switching characteristics with a 38ns turn-on delay and 12ns fall time.
MountingSurface Mount
PolarityN-CHANNEL
Power6.25W
Quick Jump:
Technical Specifications
Vishay SIR640ADP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 2mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 4.24nF |
| Lead Free | Lead Free |
| Length | 6.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 6.25W |
| Radiation Hardening | No |
| Rds On Max | 2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 38ns |
| Weight | 0.01787oz |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR640ADP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR640ADP-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
