N-channel MOSFET transistor featuring 40V drain-source voltage and 60A continuous drain current. Surface mountable in an 8-pin PowerPAK SO package, this component offers a low 1.7mΩ drain-source resistance. Operating across a -55°C to 150°C temperature range, it boasts a maximum power dissipation of 104W and includes fast switching characteristics with a 46ns turn-on delay.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power6.25W
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Technical Specifications
Vishay SIR640DP-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 1.7mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.93nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 6.25W |
| Radiation Hardening | No |
| Rds On Max | 1.7mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 46ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR640DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR640DP-T1-GE3 to view detailed technical specifications.
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