N-channel MOSFET transistor featuring 40V drain-source voltage and 60A continuous drain current. Surface mountable in an 8-pin PowerPAK SO package, this component offers a low 1.7mΩ drain-source resistance. Operating across a -55°C to 150°C temperature range, it boasts a maximum power dissipation of 104W and includes fast switching characteristics with a 46ns turn-on delay.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power6.25W
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Technical Specifications
Vishay SIR640DP-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
60A
Drain to Source Resistance
1.7mR
Drain to Source Voltage (Vdss)
40V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.93nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
104W
Mount
Surface Mount
Nominal Vgs
1V
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
6.25W
Radiation Hardening
No
Rds On Max
1.7mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
50ns
Turn-On Delay Time
46ns
Compliance
RoHS
Compliant
Datasheet
Vishay SIR640DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR640DP-T1-GE3 to view detailed technical specifications.
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