N-channel MOSFET featuring 40V drain-source voltage and low 2.7mΩ drain-source resistance at 60A continuous drain current. This surface-mount component offers fast switching with 13ns turn-on delay and 5ns fall time, supported by 3.2nF input capacitance. Operating across a -55°C to 150°C temperature range, it dissipates up to 69W maximum power. RoHS compliant and packaged in tape and reel for automated assembly.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power5.2W
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Technical Specifications
Vishay SIR644DP-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
60A
Drain to Source Resistance
2.7mR
Drain to Source Voltage (Vdss)
40V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.2nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
69W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
5.2W
Radiation Hardening
No
Rds On Max
2.7mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
29ns
Turn-On Delay Time
13ns
Compliance
RoHS
Compliant
Datasheet
Vishay SIR644DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR644DP-T1-GE3 to view detailed technical specifications.
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