N-channel Power MOSFET featuring 60V drain-source voltage and 60A continuous drain current. Offers low 6mΩ drain-to-source resistance and 7ns fall time. Designed for surface mounting in an 8-pin SO package, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 5W.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR664DP-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
60A
Drain to Source Resistance
6mR
Drain to Source Voltage (Vdss)
60V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.75nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
6mR
RoHS Compliant
No
Series
TrenchFET®
Turn-Off Delay Time
24ns
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay SIR664DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR664DP-T1-GE3 to view detailed technical specifications.
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