N-channel Power MOSFET featuring 60V drain-source voltage and 60A continuous drain current. Offers low 6mΩ drain-to-source resistance and 7ns fall time. Designed for surface mounting in an 8-pin SO package, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 5W.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR664DP-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.75nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| RoHS Compliant | No |
| Series | TrenchFET® |
| Turn-Off Delay Time | 24ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay SIR664DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR664DP-T1-GE3 to view detailed technical specifications.
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