N-Channel MOSFET with 100V Drain-Source Voltage (Vdss) and 7.5A Continuous Drain Current (ID). Features low on-resistance of 195mR (Rds On Max) and 230mR Drain to Source Resistance. Designed for surface mounting with a compact 6.25mm x 5.26mm x 1.12mm package. Offers fast switching characteristics with turn-on delay of 7ns and fall time of 11ns. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 23W.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR698DP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
7.5A
Drain to Source Resistance
230mR
Drain to Source Voltage (Vdss)
100V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
1.12mm
Input Capacitance
210pF
Length
6.25mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
23W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
195mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.5V
Turn-Off Delay Time
8ns
Turn-On Delay Time
7ns
Weight
0.01787oz
Width
5.26mm
Compliance
RoHS
Compliant
Datasheet
Vishay SIR698DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR698DP-T1-GE3 to view detailed technical specifications.
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