N-Channel MOSFET with 100V Drain-Source Voltage (Vdss) and 7.5A Continuous Drain Current (ID). Features low on-resistance of 195mR (Rds On Max) and 230mR Drain to Source Resistance. Designed for surface mounting with a compact 6.25mm x 5.26mm x 1.12mm package. Offers fast switching characteristics with turn-on delay of 7ns and fall time of 11ns. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 23W.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR698DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.12mm |
| Input Capacitance | 210pF |
| Length | 6.25mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 23W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 195mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 8ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.01787oz |
| Width | 5.26mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR698DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR698DP-T1-GE3 to view detailed technical specifications.
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