Dual N-Channel MOSFET featuring 30V Drain-Source Voltage and 8A continuous drain current. Offers low 17.5mΩ Drain-Source On-Resistance and 900pF input capacitance. Designed for surface mount applications with a maximum power dissipation of 17.8W and fast 8ns fall time. Operates across a wide temperature range from -55°C to 150°C, with RoHS compliance.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR770DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 17.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 900pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 17.8W |
| Mount | Surface Mount |
| Nominal Vgs | 2.8V |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 21mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.8V |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR770DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR770DP-T1-GE3 to view detailed technical specifications.
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