N-Channel MOSFET, 30V Vdss, 60A continuous drain current, and 3.4mΩ Rds On at 10V. Features 48W maximum power dissipation, 9ns fall time, 21ns turn-on delay, and 29ns turn-off delay. Surface mountable with a 1.12mm height, 6.25mm length, and 5.26mm width. Operates from -55°C to 150°C and is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR788DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 3.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.12mm |
| Input Capacitance | 2.873nF |
| Length | 6.25mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.4mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | SkyFET®, TrenchFET® |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 21ns |
| Weight | 0.01787oz |
| Width | 5.26mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR788DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR788DP-T1-GE3 to view detailed technical specifications.
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