N-channel MOSFET, 20V Vds, 30A continuous drain current, and 5mΩ maximum drain-source on-resistance. Features a 1.785nF input capacitance, 19ns turn-on delay, and 36ns turn-off delay, with a 13ns fall time. Operates within a -55°C to 150°C temperature range and offers 27.7W maximum power dissipation. Surface mountable in an 8-pin PowerPAK SO package, this RoHS compliant component is supplied on tape and reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR802DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 5mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.785nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 600mV |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 19ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR802DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR802DP-T1-GE3 to view detailed technical specifications.
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