N-Channel Power MOSFET featuring 100V drain-source voltage and 60A continuous drain current. Offers a low 7.2mΩ drain-source on-resistance. This surface-mount device operates with a nominal gate-source voltage of 1.2V and boasts a maximum power dissipation of 104W. Includes fast switching characteristics with 11ns turn-on delay and 11ns fall time. HALOGEN FREE and ROHS COMPLIANT.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR804DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 7.2mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 7.2mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.45nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Nominal Vgs | 1.2V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 7.2mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR804DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR804DP-T1-GE3 to view detailed technical specifications.
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