N-channel Power MOSFET featuring TrenchFET technology, designed for surface mount applications. This single quad drain triple source transistor offers a maximum drain-source voltage of 40V and a continuous drain current of 60A. It is housed in an 8-pin PowerPAK SO EP package with dimensions of 4.9mm x 5.89mm x 1.07mm (Max). Key electrical characteristics include a maximum drain-source on-resistance of 2.1 mOhm at 10V and a maximum power dissipation of 6250 mW.
PackagePowerPAK SO EP
MountingSurface Mount
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Technical Specifications
Vishay SIR814DP-T1-GE3 technical specifications.
General
| Package/Case | PowerPAK SO EP |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 5.89 |
| Package Height (mm) | 1.07(Max) |
| Seated Plane Height (mm) | 1.04 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 60A |
| Maximum Gate Threshold Voltage | 2.3V |
| Maximum Drain Source Resistance | 2.1@10VmOhm |
| Typical Gate Charge @ Vgs | 57@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 57nC |
| Typical Input Capacitance @ Vds | 3800@20VpF |
| Maximum Power Dissipation | 6250mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SIR814DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR814DP-T1-GE3 to view detailed technical specifications.
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