N-Channel Power MOSFET, 80V Vdss, 60A continuous drain current. Features low 5.5mΩ drain-source on-resistance and 1.2V threshold voltage. Operates from -55°C to 150°C with a maximum power dissipation of 104W. Surface mountable in a leadless POWERPAK package, this component is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SIR826ADP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 5.5mR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 5.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 16ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR826ADP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR826ADP-T1-GE3 to view detailed technical specifications.
No datasheet is available for this part.