N-channel MOSFET with 80V drain-source voltage and 4.8mΩ drain-source resistance at 10V gate-source voltage. Features 60A continuous drain current, 150°C maximum operating temperature, and 104W maximum power dissipation. This surface mount device in an SOIC package offers fast switching with an 8ns fall time and 15ns turn-on delay. RoHS compliant and lead-free.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power6.25W
Quick Jump:
Technical Specifications
Vishay SIR826DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 4.8mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 6.25W |
| Radiation Hardening | No |
| Rds On Max | 4.8mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR826DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR826DP-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
