N-channel Power MOSFET featuring a 40V drain-source voltage and 10.6A continuous drain current. This surface-mount transistor is housed in an 8-pin PowerPAK SO package with a package length of 4.9mm and width of 5.89mm. It offers a low drain-source on-resistance of 19mΩ at 10V Vgs and a maximum power dissipation of 3900mW. The component operates across a temperature range of -55°C to 150°C.
PackagePowerPAK SO
MountingSurface Mount
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Technical Specifications
Vishay SiR836DP technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package/Case | PowerPAK SO |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 5.89 |
| Package Height (mm) | 1.07(Max) |
| Seated Plane Height (mm) | 1.04 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 10.6A |
| Maximum Drain Source Resistance | 19@10VmOhm |
| Typical Gate Charge @ Vgs | 11.8@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 11.8nC |
| Typical Input Capacitance @ Vds | 600@20VpF |
| Maximum Power Dissipation | 3900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiR836DP Datasheet
Download the complete datasheet for Vishay SiR836DP to view detailed technical specifications.
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