N-channel MOSFET with 25V drain-source voltage and 30A continuous drain current. Features low 7.3mΩ drain-source resistance and 1.12nF input capacitance. Operates with a 3V threshold voltage and 20V gate-source voltage. Packaged in an 8-pin SOIC PowerPAK for surface mounting, with a maximum power dissipation of 41.7W. RoHS compliant and suitable for operation between -55°C and 150°C.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power4.8W
Quick Jump:
Technical Specifications
Vishay SIR850DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
30A
Drain to Source Resistance
7.3mR
Drain to Source Voltage (Vdss)
25V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
1.12nF
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
41.7W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
4.8W
Rds On Max
7mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
30ns
Turn-On Delay Time
20ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SIR850DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR850DP-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
