N-channel enhancement mode Power MOSFET in an 8-pin PowerPAK SO surface-mount package. Features a maximum drain-source voltage of 25V and a continuous drain current of 32A. Offers a low drain-source on-resistance of 2.8mOhm at 10V. Designed with a single Quad Drain Triple Source configuration and a maximum power dissipation of 5200mW. Operates across a temperature range of -55°C to 150°C.
PackagePowerPAK SO
MountingSurface Mount
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Technical Specifications
Vishay SiR862DP technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package/Case | PowerPAK SO |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 5.89 |
| Package Height (mm) | 1.04 |
| Seated Plane Height (mm) | 1.04 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 25V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 32A |
| Maximum Drain Source Resistance | 2.8@10VmOhm |
| Typical Gate Charge @ Vgs | 60@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 60nC |
| Typical Input Capacitance @ Vds | 3800@10VpF |
| Maximum Power Dissipation | 5200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiR862DP Datasheet
Download the complete datasheet for Vishay SiR862DP to view detailed technical specifications.
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