N-channel enhancement mode Power MOSFET featuring a 25V drain-source voltage and 32A continuous drain current. This single, quad-drain, triple-source configured transistor is surface-mount, housed in an 8-pin PowerPAK SO package with no leads. Key specifications include a maximum drain-source resistance of 2.8 mOhm at 10V, typical gate charge of 60 nC at 10V, and typical input capacitance of 3800 pF at 10V. Maximum power dissipation is 5200 mW, with an operating temperature range of -55°C to 150°C.
PackagePowerPAK SO
MountingSurface Mount
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Technical Specifications
Vishay SiR862DP-T1-GE3 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package/Case
PowerPAK SO
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
4.9
Package Width (mm)
5.89
Package Height (mm)
1.07(Max)
Seated Plane Height (mm)
1.04
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
25V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
32A
Maximum Drain Source Resistance
2.8@10VmOhm
Typical Gate Charge @ Vgs
60@10V|[email protected]nC
Typical Gate Charge @ 10V
60nC
Typical Input Capacitance @ Vds
3800@10VpF
Maximum Power Dissipation
5200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
18612
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay SiR862DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SiR862DP-T1-GE3 to view detailed technical specifications.
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