Single N-Channel Power MOSFET featuring 20V Drain-Source Voltage (Vdss) and a low 1.9mR maximum Drain-Source On-Resistance (Rds On Max). This surface mount device offers a continuous drain current of 60A and a maximum power dissipation of 83W. It operates within a temperature range of -55°C to 150°C and is packaged in a compact SOIC form factor. Key switching characteristics include a 42ns turn-on delay and a 49ns fall time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR866DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 20.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 1.9mR |
| Fall Time | 49ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 4.73nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 1.9mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.3V |
| Turn-Off Delay Time | 66ns |
| Turn-On Delay Time | 42ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR866DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR866DP-T1-GE3 to view detailed technical specifications.
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