N-channel power MOSFET featuring 100V drain-source voltage and 60A continuous drain current. Offers a low 6mΩ drain-source on-resistance and 1.2V threshold voltage. Designed for surface mounting in a SOIC package, this component boasts a maximum power dissipation of 104W and operates within a temperature range of -55°C to 150°C. Includes 8ns fall time and 2.84nF input capacitance. Halogen-free and RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR870DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 6mR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.84nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR870DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR870DP-T1-GE3 to view detailed technical specifications.
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