Power MOSFET, General Purpose. Features 150V Drain to Source Voltage (Vdss) and 53.7A Continuous Drain Current (ID). Offers low 20mR Drain-source On Resistance-Max. Operates within a -55°C to 150°C temperature range with 104W Max Power Dissipation. Surface mountable, RoHS compliant, and available in Tape and Reel packaging.
MountingSurface Mount
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Technical Specifications
Vishay SIR872DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 53.7A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 20MR |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.13nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.5V |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR872DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR872DP-T1-GE3 to view detailed technical specifications.
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