N-channel MOSFET, 25V Vdss, 29A continuous drain current, and 3.25mR Rds On. Features include 11ns fall time, 32ns turn-on delay, and 40ns turn-off delay. This surface mount component operates from -55°C to 150°C with a maximum power dissipation of 48W. Packaged in tape and reel, it is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIR888DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 29A |
| Drain to Source Resistance | 3.25mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.04mm |
| Input Capacitance | 5.065nF |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.25mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 32ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIR888DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR888DP-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.