The SIRA34DP-T1-GE3 is a surface mount N-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 31.25W and a continuous drain current of 40A. The device has a drain to source resistance of 6.7mR and a gate to source voltage of -16V. It is RoHS compliant and available in tape and reel packaging.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIRA34DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 6.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | -16V |
| Input Capacitance | 1.1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31.25W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 6.7mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIRA34DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIRA34DP-T1-GE3 to view detailed technical specifications.
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